ALEXANDRIA, Va., March 26 -- United States Patent no. 12,258,266, issued on March 25, was assigned to InvenSense Inc. (San Jose, Calif.).
"Method and system for fabricating a MEMS device" was invented by Daesung Lee (San Jose, Calif.) and Alan Cuthbertson (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further ...