US Patent Issued to International Businesss Machines on Nov. 11 for "Phase-change memory cell with reduced heater size" (New York Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,506, issued on Nov. 11, was assigned to International Businesss Machines Corp. (Armonk, N.Y.).

"Phase-change memory cell with reduced heater size" was invented by Kangguo Cheng (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase-change memory device with reduced heater size includes a first conductive structure within a first dielectric layer. A heater element is located within a second dielectric layer disposed above the first conductive structure. The heater element includes a third dielectric layer defining a perimeter, a top portion of a heater material layer partially overlapping the perimeter of the third dielectric layer...