US Patent Issued to International Business Machines on Sept. 30 for "Vertically stacked FET with strained channel" (New York Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,469, issued on Sept. 30, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertically stacked FET with strained channel" was invented by Shogo Mochizuki (Mechanicville, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Juntao Li (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked semiconductor device includes a lower semiconductor device that has a backside and includes a flipped upper semiconductor device that has a backside that is opposed to the lower semiconductor device backside. The flipped upper semiconductor device further includes a backside residual semiconductor on insulator (SOI) layer and a stressed d...