US Patent Issued to International Business Machines on Sept. 30 for "Nanowire source/drain formation for nanosheet device" (New York Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,968, issued on Sept. 30, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Nanowire source/drain formation for nanosheet device" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method including forming a plurality of nanosheets on a substrate and forming a plurality of sacrificial layers on the substrate, wherein the plurality of nanosheets and the plurality of sacrificial layers are arranged as alternating layers. Forming and patterning a first hardmask located on top of one of th...