US Patent Issued to International Business Machines on Sept. 30 for "Multi-VT solution for replacement metal gate bonded stacked FET" (New York, California Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,020, issued on Sept. 30, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Multi-VT solution for replacement metal gate bonded stacked FET" was invented by Ruqiang Bao (Niskayuna, N.Y.), Dechao Guo (Niskayuna, N.Y.), Junli Wang (Slingerlands, N.Y.) and Heng Wu (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; a set of first transistors positioned on an upper surface of the substrate, each of the set of first transistors comprising a first gate and a first dielectric; an insulating layer positioned on an upper surface of the set of first transistors; and a set of sec...