US Patent Issued to International Business Machines on Sept. 30 for "MRAM structure with a T-shaped ferromagnetic layer" (New York Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,170, issued on Sept. 30, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM structure with a T-shaped ferromagnetic layer" was invented by Koichi Motoyama (Clifton Park, N.Y.), Oscar van der Straten (Guilderland Center, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming a bottom electrode layer surrounded by a bottom dielectric layer; forming an etch-stop layer on top of the bottom electrode layer and the bottom dielectric layer; creating an opening in the etch-stop layer to expose ...