ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,320, issued on Sept. 23, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Vertically stacked fin semiconductor devices" was invented by Praveen Joseph (White Plains, N.Y.), Tao Li (Albany, N.Y.), Indira Seshadri (Niskayuna, N.Y.) and Ekmini A. De Silva (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same include forming a first dielectric layer around a semiconductor fin, formed from a first dielectric material, to a target height lower than a height of the semiconductor fin. A second dielectric layer is deposited on the first dielectric layer and is formed fr...