US Patent Issued to International Business Machines on Sept. 23 for "Strain generation and anchoring in gate-all-around field effect transistors" (New York Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,314, issued on Sept. 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Strain generation and anchoring in gate-all-around field effect transistors" was invented by Julien Frougier (Albany, N.Y.), Sung Dae Suk (Watervliet, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Andrew M. Greene (Slingerlands, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor channel layers vertically aligned and stacked one on top of another, each separated by a gate stack material, a source-drain epitaxy region adjacent to the semiconductor channel layers, a vertical side surface of the source-drain epita...