ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,549, issued on Sept. 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Skip-level TSV with hybrid dielectric scheme for backside power delivery" was invented by Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Huai Huang (Clifton Park, N.Y.), Hosadurga Shobha (Niskayuna, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A skip-level through-silicon via structure is provided that enables low resistance via connection for backside power distribution by skipping one or more intermediate backside metal layers. The skip-level through-silicon via st...