US Patent Issued to International Business Machines on Sept. 23 for "Conductive oxide diffusion barrier for laser crystallization" (New York Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,518, issued on Sept. 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Conductive oxide diffusion barrier for laser crystallization" was invented by Ning Li (White Plains, N.Y.), Fabio Carta (Pleasantville, N.Y.), Devendra K. Sadana (Pleasantville, N.Y.) and Tze-Chiang Chen (Yorktown Heights, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cross-point memory semiconductor structure and a method of creating the same are provided. There is a first electrode layer on top of the substrate. A conductive oxide diffusion barrier layer is on top of the first electrode. A polycrystalline silicon diode is on top of the conducti...