US Patent Issued to International Business Machines on Sept. 16 for "High density static random-access memory" (New Hampshire, Vermont, New York Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,024, issued on Sept. 16, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"High density static random-access memory" was invented by Brent A. Anderson (Jericho, Vt.), Ruilong Xie (Niskayuna, N.Y.), Albert M. Chu (Nashua, N.H.) and Carl Radens (LaGrangeville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory cell comprising six vertical-transport field-effect transistors (VTFET) on a wafer. The six VTFET are in a first layer. The six VTFET are in a first row."

The patent was filed on Nov. 8, 2022, under Application No. 18/053,451.

*For further information, including images, charts and tables, please vi...