US Patent Issued to International Business Machines on Sept. 16 for "Formation of trench silicide source or drain contacts without gate damage" (New York Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,944, issued on Sept. 16, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Formation of trench silicide source or drain contacts without gate damage" was invented by Andrew Greene (Albany, N.Y.), Ruilong Xie (Schenectady, N.Y.), Laertis Economikos (Wappingers Falls, N.Y.), Veeraraghavan S. Basker (Schenectady, N.Y.), Chanro Park (Clifton Park, N.Y.) and Hui Zang (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes one or more fins extending from a substrate, the one or more fins having source/drain epitaxial grown material (S/D epitaxy) thereon that merges one or more fins, a gate fo...