US Patent Issued to International Business Machines on Sept. 16 for "Field effect transistor with backside source/drain" (New York, Vermont Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,079, issued on Sept. 16, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Field effect transistor with backside source/drain" was invented by Ruilong Xie (Niskayuna, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Brent A. Anderson (Jericho, Vt.), Kisik Choi (Watervliet, N.Y.), Su Chen Fan (Cohoes, N.Y.), Shogo Mochizuki (Mechanicville, N.Y.) and Son Nguyen (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extend vertically upwa...