US Patent Issued to International Business Machines on Oct. 7 for "VTFET with controlled fin height" (New York, Connecticut Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,633, issued on Oct. 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"VTFET with controlled fin height" was invented by Ruilong Xie (Niskayuna, N.Y.), Chun-Chen Yeh (Danbury, Conn.), Alexander Reznicek (Troy, N.Y.) and Kangguo Cheng (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a vertical transport field-effect transistor (VTFET) device including a bottom source/drain (S/D) epitaxial layer, a vertical fin channel formed on the bottom S/D epitaxial layer, and a top S/D epitaxial layer formed on the vertical fin channel. The bottom S/D epitaxial layer has an asymmetric profile...