US Patent Issued to International Business Machines on Oct. 7 for "Vertical transistor with reduced cell height" (New Hampshire, New York, Vermont Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,660, issued on Oct. 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical transistor with reduced cell height" was invented by Brent A. Anderson (Jericho, Vt.), Ruilong Xie (Niskayuna, N.Y.), Albert M. Chu (Nashua, N.H.), Hemanth Jagannathan (Niskayuna, N.Y.) and Junli Wang (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a vertical semiconductor channel region, a bottom source drain region arranged on a substrate at a bottom of the vertical semiconductor channel region, a metal gate disposed around the vertical semiconductor channel region, where a first portion of th...