US Patent Issued to International Business Machines on Oct. 7 for "Semiconductor backside contact structure with increased contact area" (New York Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,672, issued on Oct. 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor backside contact structure with increased contact area" was invented by Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Julien Frougier (Albany, N.Y.), Chanro Park (Clifton Park, N.Y.) and Min Gyu Sung (Latham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure having a backside contact structure with increased contact area includes a plurality of source/drain regions within a field effect transistor, each of the plurality of source/drain regions includes a top portion having an inverted V-shaped are...