US Patent Issued to International Business Machines on Oct. 7 for "Non-self-aligned wrap-around contact in a tight gate pitched transistor" (New York Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,631, issued on Oct. 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Non-self-aligned wrap-around contact in a tight gate pitched transistor" was invented by Chanro Park (Clifton Park, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Juntao Li (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) is provided. The IC includes a substrate that includes first and second channels. A shared source or drain (S/D) region is between the first and second channels. The shared source or drain region includes an uppermost surface and further includes a second surface recessed f...