ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,034, issued on Oct. 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Narrowing single diffusion break" was invented by Ruilong Xie (Niskayuna, N.Y.), Veeraraghavan S. Basker (Schenectady, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Junli Wang (Slingerlands, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein describe semiconductor devices with single diffusion breaks that are narrower than the gates of transistors in those devices. That is, rather than forming the diffusion breaks using a dummy gate (which would result in the diffusion breaks having the same width as the gates of the transistors) the embod...