US Patent Issued to International Business Machines on Oct. 7 for "MRAM integration with self-aligned direct back side contact" (New York, Vermont Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,608, issued on Oct. 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM integration with self-aligned direct back side contact" was invented by Ruilong Xie (Niskayuna, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Brent A. Anderson (Jericho, Vt.), Michael Rizzolo (Delmar, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A back side contact structure is provided that directly connects a first electrode of a MRAM, which is present in a back side of a wafer, to a source/drain structure of a transistor. The back side contact is s...