US Patent Issued to International Business Machines on Oct. 7 for "Double patterning with selectively deposited spacer" (American, Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,047, issued on Oct. 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Double patterning with selectively deposited spacer" was invented by Chanro Park (Clifton Park, N.Y.), Hseuh-Chung Chen (Cohoes, N.Y.), Koichi Motoyama (Shatin, Hong Kong), Kenneth Chun Kuen Cheng (Boxborough, Mass.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first metal interconnection pattern is formed over a substrate. A spacer layer is selectively deposited on the exposed surfaces of the first metal interconnection pattern. Subsequently, a metal overburden layer is deposited on the spacer layer. The excess portion...