US Patent Issued to International Business Machines on Oct. 28 for "Semiconductor device with void under source/drain region for backside contact" (New York Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,780, issued on Oct. 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor device with void under source/drain region for backside contact" was invented by Ruilong Xie (Niskayuna, N.Y.), Alexander Reznicek (Troy, N.Y.), Daniel Schmidt (Niskayuna, N.Y.) and Tsung-Sheng Kang (Ballston Lake, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments are disclosed for a method for fabricating a semiconductor device. The method includes forming a recess under a region for a source/drain (S/D). The method further includes depositing a sacrificial placeholder liner conformally. Additionally, the method includes perfor...