US Patent Issued to International Business Machines on Oct. 28 for "Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features" (New York Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,905, issued on Oct. 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features" was invented by Kisup Chung (Slingerlands, N.Y.), Michael Rizzolo (Albany, N.Y.) and Fee Li Lie (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the invention are directed to a method of forming an integrated circuit. Both a dielectric layer and a bottom contact are formed with the bottom contact disposed at least partially in the dielectric layer. The bottom contact is subsequently recessed into the dielectric layer to c...