US Patent Issued to International Business Machines on Oct. 28 for "Magnetoresistive random-access memory with top and bottom electrodes deposited in unison" (New York Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,907, issued on Oct. 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Magnetoresistive random-access memory with top and bottom electrodes deposited in unison" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Koichi Motoyama (Clifton Park, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method to form a semiconductor structure for a magnetoresistive random-access memory (MRAM) device where the material for the top electrode and the bottom electrode is deposited in a single process. The method includes conformally depositing an electrode material over a magnetic tunne...