ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,296, issued on Oct. 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Phase-change memory device with conductive cladding" was invented by Guy M. Cohen (Ossining, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Julien Frougier (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive material contacts the sidewall of the top elec...