US Patent Issued to International Business Machines on Oct. 21 for "Multi-level programming of phase change memory device" (New York Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,294, issued on Oct. 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Multi-level programming of phase change memory device" was invented by Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.), Ching-Tzu Chen (Ossining, N.Y.) and Carl Radens (LaGrangeville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase change memory includes a phase change structure. There is a heater coupled to a first surface of the phase change structure. A first electrode is coupled to a second surface of the phase change structure. A second electrode coupled to a second surface of the heater. A third electrode is connected to a fir...