US Patent Issued to International Business Machines on Oct. 21 for "Heterogeneous gate all around dielectric thickness" (New York Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,176, issued on Oct. 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Heterogeneous gate all around dielectric thickness" was invented by Kangguo Cheng (Schenectady, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Chanro Park (Clifton Park, N.Y.) and Min Gyu Sung (Latham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor includes a first GAA FET and second GAA FET. The second GAA FET includes a first gate dielectric and second gate dielectric within its gate structure. The first GAA FET includes just the first gate dielectric within its gate structure. The gate dielectric structure of ...