ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,146, issued on Oct. 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Epi growth uniformity with source/drain placeholder" was invented by Ruilong Xie (Niskayuna, N.Y.), Daniel Schmidt (Niskayuna, N.Y.), Tsung-Sheng Kang (Ballston Lake, N.Y.) and Alexander Reznicek (Troy, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a nanosheet stack on a substrate. A first source/drain is on a first side of the nanosheet stack and a second source/drain is on an opposing side of the nanosheet stack. A backside contact includes a first contact end on a first end of the first source/drain and an opposing ...