ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,412, issued on Oct. 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Backside gate via structure using self-aligned scheme" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Leon Sigal (Monsey, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A structure including a plurality of nanosheet transistors each comprising a gate. A gate protrusion extends from the gate towards the backside of one of the plurality of electronic devices. A first dielectric liner is located flush against the sidewalls of the gate protrusion. A contact via connected to a backside...