US Patent Issued to International Business Machines on Oct. 14 for "Stacked field effect transistor structure with independent gate control between top and bottom gates" (New York Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,306, issued on Oct. 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked field effect transistor structure with independent gate control between top and bottom gates" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Su Chen Fan (Cohoes, N.Y.), Jingyun Zhang (Albany, N.Y.), Ruqiang Bao (Niskayuna, N.Y.) and Son Nguyen (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first transistor and a first gate electrically coupled to the first transistor. A second transistor is positioned on top of the first transistor. A second gate is electrically coupled to the second tra...