US Patent Issued to International Business Machines on Oct. 14 for "Bottom contact with self-aligned spacer for stacked semiconductor devices" (New York, Vermont Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,320, issued on Oct. 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Bottom contact with self-aligned spacer for stacked semiconductor devices" was invented by Gen Tsutsui (Glenmont, N.Y.), Albert M. Young (Fishkill, N.Y.), Su Chen Fan (Cohoes, N.Y.), Junli Wang (Slingerlands, N.Y.) and Brent A Anderson (Jericho, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An approach forming semiconductor structure composed of one or more stacked semiconductor devices that include at least a top semiconductor device, a bottom semiconductor device under the top semiconductor, and contacts to each of the semiconductor devices. The app...