US Patent Issued to International Business Machines on Nov. 4 for "Vertical field effect transistor with minimal contact to gate erosion" (New York Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,809, issued on Nov. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical field effect transistor with minimal contact to gate erosion" was invented by Su Chen Fan (Cohoes, N.Y.), Christopher J. Waskiewicz (Rexford, N.Y.), Yann Mignot (Slingerlands, N.Y.), Jeffrey C. Shearer (Albany, N.Y.) and Hemanth Jagannathan (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a substrate including at least one vertical fin extending from the substrate, a bottom source/drain region beneath the at least one vertical fin, a top source/drain region disposed above the at least one vertical fin,...