US Patent Issued to International Business Machines on Nov. 4 for "Static random access memory device with stacked FETs" (New York, California Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,696, issued on Nov. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Static random access memory device with stacked FETs" was invented by Huimei Zhou (Albany, N.Y.), Carl Radens (LaGrangeville, N.Y.), Chen Zhang (Santa Clara, Calif.), Junli Wang (Slingerlands, N.Y.) and Miaomiao Wang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a semiconductor device comprising: a first stacked field effect transistor (FET) structure in a first device area, the first stacked FET structure comprising a first pull down (PD) transistor, and a first pull up (PU...