US Patent Issued to International Business Machines on Nov. 4 for "Semiconductor structure with backside metallization layers" (New York Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,132, issued on Nov. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor structure with backside metallization layers" was invented by Ruilong Xie (Niskayuna, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.) and Oleg Gluschenkov (Tannersville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first metallization layer having a first plurality of metal containing lines, and a second metallization layer located above the first metallization layer. The second metallization layer includes a second plurality of metal containing lines. A firs...