US Patent Issued to International Business Machines on Nov. 4 for "Layered bottom electrode dielectric for embedded MRAM" (New York Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,731, issued on Nov. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Layered bottom electrode dielectric for embedded MRAM" was invented by Ashim Dutta (Clifton Park, N.Y.), Michael Rizzolo (Delmar, N.Y.), Jon Slaughter (Slingerlands, N.Y.), Chih-Chao Yang (Glenmont, N.Y.) and Theodorus E. Standaert (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An MRAM device is provided. The MRAM device includes a first dielectric cap layer formed on an underlying layer, a second dielectric cap layer formed on the first dielectric cap layer, the first dielectric cap layer including a lower-Kappa material than that of the...