US Patent Issued to International Business Machines on Nov. 25 for "Tunnel field effect transistor devices" (American, Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,262, issued on Nov. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Tunnel field effect transistor devices" was invented by Alexander Reznicek (Troy, N.Y.), Bahman Hekmatshoartabari (White Plains, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and ChoongHyun Lee (Chigasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor tunnel FET (field effect transistor) including a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region. The first source/drain region includes a p-type material; and the second source/drain region includes an n-type material."

The patent w...