US Patent Issued to International Business Machines on Nov. 25 for "Horizontally stacked nanosheet gate all around device structure" (New York Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,250, issued on Nov. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Horizontally stacked nanosheet gate all around device structure" was invented by Shogo Mochizuki (Mechanicville, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Juntao Li (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate disposed in a horizontal plane, a gate metal on the substrate, a first spacer and a second spacer on the substrate with the gate metal between the first spacer and the second spacer, and a plurality of horizontally stacked nanosheets extending between the first spacer and the second sp...