US Patent Issued to International Business Machines on Nov. 25 for "Forksheet transistor with dual depth late cell boundary cut" (New York Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,297, issued on Nov. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Forksheet transistor with dual depth late cell boundary cut" was invented by Ruilong Xie (Niskayuna, N.Y.), Tsung-Sheng Kang (Ballston Lake, N.Y.), Alexander Reznicek (Troy, N.Y.) and Sagarika Mukesh (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments are disclosed for a semiconductor structure. The semiconductor structure includes a first pair of field effect transistors (FETs). Additionally, the semiconductor structure includes a second pair of FETs. Further, the semiconductor structure includes a shallow gate cut that separates a fi...