US Patent Issued to International Business Machines on Nov. 18 for "Stacked FET with extremely small cell height" (New York, Vermont Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,819, issued on Nov. 18, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked FET with extremely small cell height" was invented by Ruilong Xie (Niskayuna, N.Y.), Chen Zhang (Guilderland, N.Y.), Albert M. Young (Fishkill, N.Y.), Brent A. Anderson (Jericho, Vt.), Kisik Choi (Watervliet, N.Y.) and Junli Wang (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic structure including a first stacked FET device that includes a first bottom FET device and a first upper FET device. The first bottom FET device include a plurality of first bottom channel layers, and the first upper FET device includes a ...