US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Nov. 18 for "Gate-all-around field-effect-transistor with wrap-around-channel inner spacer" (New York Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,779, issued on Nov. 18, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Gate-all-around field-effect-transistor with wrap-around-channel inner spacer" was invented by Julien Frougier (Albany, N.Y.), Andrew M. Greene (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Veeraraghavan S. Basker (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate-all-around field effect transistor device is provided. The gate-all-around field effect transistor device includes one or more channel layers on a substrate. The gate-all-around field effect transistor device further includes an i...