US Patent Issued to International Business Machines on Nov. 11 for "Hybrid stacked field effect transistors" (New York Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,364, issued on Nov. 11, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Hybrid stacked field effect transistors" was invented by Ruilong Xie (Niskayuna, N.Y.), Bahman Hekmatshoartabari (White Plains, N.Y.), Alexander Reznicek (Troy, N.Y.) and Heng Wu (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A hybrid stacked semiconductor device includes a nanosheet stack on a substrate and an all-around gate. The nanosheet stack includes a first stack portion and a second stack portion. The first stack portion includes first channels. The second stack portion is stacked on the first stack portion, and includes second c...