ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,762, issued on May 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Vertical phase change memory device" was invented by Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.), Carl Radens (LaGrangeville, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a phase change memory (PCM) device. The PCM device includes a first PCM cell with the first PCM cell including an L-shaped phase change element, the L-shaped phase change element having a horizontal portion and a vertical portion on top of the horizontal portion; a selector underneath the hori...