US Patent Issued to International Business Machines on May 27 for "Resistive random-access memory structures with stacked transistors" (New York Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,514, issued on May 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Resistive random-access memory structures with stacked transistors" was invented by Min Gyu Sung (Latham, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Chanro Park (Clifton Park, N.Y.) and Soon-Cheon Seo (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure comprises a first transistor, a second transistor vertically stacked over the first transistor, a source/drain region shared between the first transistor and the second transistor, and a resistive random-access ...