US Patent Issued to International Business Machines on May 27 for "Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure" (New York Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,537, issued on May 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure" was invented by Ruilong Xie (Niskayuna, N.Y.), Dechao Guo (Niskayuna, N.Y.), Junli Wang (Slingerlands, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided that includes a local passthrough interconnect structure present in a non-active device region of the device. A dielectric fill material structure is located between the local passthrough interconnect structure and a fun...