ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,752, issued on May 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"MRAM structure with multilayer encapsulation" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Joseph F. Maniscalco (Lake Katrine, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure may include a pyramidal magnetic tunnel junction on top of a bottom electrode, a tunnel layer on top and in electrical contact with the first magnetic layer, a second magnetic layer on top and in electrical contact with the tunnel layer, and a hard mask cap on to...