ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,763, issued on May 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Memory cell with comb-shaped electrodes" was invented by Juntao Li (Cohoes, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Carl Radens (LaGrangeville, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A structure including a bottom electrode on a substrate, a first side electrode vertically aligned above the bottom electrode, a set of alternating layers of insulator layers and conductive layers horizontally adjacent to the first side electrode, and a resistance switching material layer, the resistance switching material layer ...