US Patent Issued to International Business Machines on May 27 for "Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor" (New York Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,555, issued on May 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor" was invented by Julien Frougier (Albany, N.Y.), Sagarika Mukesh (Albany, N.Y.), Ruqiang Bao (Niskayuna, N.Y.), Andrew M. Greene (Slingerlands, N.Y.), Jingyun Zhang (Albany, N.Y.), Nicolas Loubet (Guilderland, N.Y.) and Veeraraghavan S. Basker (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure may include one or more nanosheet field-effect transistors formed on a first portion of a substrate, and one or more fin field-effect...