US Patent Issued to International Business Machines on May 27 for "Crossbar memory array in back end of line" (New York Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,760, issued on May 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Crossbar memory array in back end of line" was invented by Devendra K. Sadana (Pleasantville, N.Y.), Ning Li (White Plains, N.Y.) and Bahman Hekmatshoartabari (White Plains, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bottom electrode, a phase change material layer, the phase change material layer includes a similar lattice constant as a lattice constant of the bottom electrode, and a top electrode vertically aligned. A phase change material layer, a top electrode adjacent to a first vertical side surface of the phase change material layer, and a ...