ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,267, issued on May 20, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"ReRAM module with intermediate electrode" was invented by Juntao Li (Cohoes, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Kevin W. Brew (Niskayuna, N.Y.) and Dexin Kong (Redmond, Wash.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive RAM module comprises a source electrode and an intermediate electrode that is formed on the source electrode. The intermediate electrode has a closed-curve profile. The resistive RAM module also comprises a memristor element that is deposited on the intermediate electrode. The resistive RAM module also comprises a sink e...