US Patent Issued to International Business Machines on May 20 for "Nanosheet transistor devices with different active channel widths" (New York, New Jersey, Massachusetts Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,061, issued on May 20, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Nanosheet transistor devices with different active channel widths" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Chanro Park (Clifton Park, N.Y.), Cheng Chi (Jersey City, N.J.) and Jinning Liu (Andover, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure comprises a substrate defining a first axis and a second axis orthogonal to the first axis, a first nanosheet region disposed on the substrate and defining a first channel width along the second axis, a first gate...