ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,617, issued on May 13, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned buried power rail cap for semiconductor devices" was invented by Ruilong Xie (Niskayuna, N.Y.), Huimei Zhou (Albany, N.Y.), Julien Frougier (Albany, N.Y.) and Kisik Choi (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A buried power rail is provided in a non-active device region. The buried power rail includes a dielectric liner located on a lower portion of a sidewall and a bottommost surface of the buried power rail. A dielectric cap is located on an upper portion of the sidewall of the buried power rail as well as on a topmo...